发明名称 UNDER-FILL MATERIAL FOR FLIP CHIP TYPE SEMICONDUCTOR DEVICE AND FLIP CHIP TYPE SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To obtain the subject underfill material that can be impregnated into gaps because of its low viscosity, even when a large amount of inorganic filler is formulated thereto by formulating a specific filler, a specific compound and an accelerating agent to a liquid epoxy resin. SOLUTION: The objective underfill material is obtained by formulating (A) 100 pts.wt. of a liquid epoxy resin, (B) 100-300 pts.wt. of spherical inorganic filler with the maximum particle size of <=50μm and an average particle size of 0.5-10μm, (C) 0.1-6 pts.wt. of a reactive functional group-bearing silicone represented by the formula: R1aR2bSi(OR3)c(OH)d O(4-a-b-c-d)/2 [R1 is a monovalent organic group bearing a reactive functional group; R2 and R3 are each a 1-8 (alkoxy-substituted) monovalent hydrocarbon group; a is 0.16-1.0; b is 0-2.0; c is 0.5-2.0; d is 0-1.0 where a+b+c+d=0.8-3; the number of Si atoms in one molecule is 2-6] and (D) 0.01-10 pts.wt. of the accelerating agent.
申请公布号 JP2001055486(A) 申请公布日期 2001.02.27
申请号 JP20000163890 申请日期 2000.06.01
申请人 SHIN ETSU CHEM CO LTD 发明人 SHIOBARA TOSHIO;SUMIDA KAZUMASA
分类号 C08L63/00;C08G59/40;C08K3/00;H01L23/29;H01L23/31;(IPC1-7):C08L63/00 主分类号 C08L63/00
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