发明名称 |
Surface acoustic wave functional device |
摘要 |
The surface acoustic wave functional element comprises a semiconductor layer provided on a piezoelectric substrate or a piezoelectric film substrate and makes use of interaction between a surface acoustic wave propagating on the substrate and electrons in the substrate layer, but has the semiconductor layer disposed outside above the propagation path for propagating a surface acoustic wave, comprises a plurality of grating electrodes perpendicularly above and to the propagation path and moreover the semiconductor layer comprises an active layer and a buffer layer lattice-matching thereto. By use of this surface acoustic wave functional element, a surface acoustic wave amplifier capable of providing a high amplification gain at a practical low voltage, a surface acoustic wave convolver having a higher efficiency than ever or the like are offered.
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申请公布号 |
US6194808(B1) |
申请公布日期 |
2001.02.27 |
申请号 |
US20000230193 |
申请日期 |
2000.01.12 |
申请人 |
YAMANOUCHI KAZUHIKO;ASAHI KASEI KOGYO KABUSHIKI KAISHA |
发明人 |
YAMANOUCHI KAZUHIKO;ODAGAWA HIROYUKI;SATO WASUKE;KUZE NAOHIRO;GOTO HIROMASA |
分类号 |
G06G7/195;H03H9/02;H03H9/145;(IPC1-7):H03H9/25 |
主分类号 |
G06G7/195 |
代理机构 |
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