发明名称 Surface acoustic wave functional device
摘要 The surface acoustic wave functional element comprises a semiconductor layer provided on a piezoelectric substrate or a piezoelectric film substrate and makes use of interaction between a surface acoustic wave propagating on the substrate and electrons in the substrate layer, but has the semiconductor layer disposed outside above the propagation path for propagating a surface acoustic wave, comprises a plurality of grating electrodes perpendicularly above and to the propagation path and moreover the semiconductor layer comprises an active layer and a buffer layer lattice-matching thereto. By use of this surface acoustic wave functional element, a surface acoustic wave amplifier capable of providing a high amplification gain at a practical low voltage, a surface acoustic wave convolver having a higher efficiency than ever or the like are offered.
申请公布号 US6194808(B1) 申请公布日期 2001.02.27
申请号 US20000230193 申请日期 2000.01.12
申请人 YAMANOUCHI KAZUHIKO;ASAHI KASEI KOGYO KABUSHIKI KAISHA 发明人 YAMANOUCHI KAZUHIKO;ODAGAWA HIROYUKI;SATO WASUKE;KUZE NAOHIRO;GOTO HIROMASA
分类号 G06G7/195;H03H9/02;H03H9/145;(IPC1-7):H03H9/25 主分类号 G06G7/195
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