发明名称 |
Method for forming CU-thin film |
摘要 |
A method for forming a Cu-thin film includes the steps of coating a dispersion containing Cu-containing ultrafine particles individually dispersed therein on a semiconductor substrate having recessed portions, such as wiring grooves, via holes or contact holes, which have an aspect ratio ranging from 1 to 30; firing the coated semiconductor substrate in an atmosphere which can decompose organic substances present in the dispersion, but never oxidizes Cu to form a Cu-thin film on the substrate; then removing the Cu-thin film on the substrate except for that present in the recessed portions to thus level the surface of the substrate and to form the Cu-thin film in the recessed portions. The method permits the complete embedding or filling of the recessed portions of LSI substrates having a high aspect ratio with a Cu-thin film and thus permits the formation of a conductive, uniform and fine pattern, and further requires a low processing cost.
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申请公布号 |
US6194316(B1) |
申请公布日期 |
2001.02.27 |
申请号 |
US19990368901 |
申请日期 |
1999.08.06 |
申请人 |
VACUUM METALLURGICAL CO., LTD.;NIHON SHINKU GIJUTSU KABUSHIKI KAISHA |
发明人 |
ODA MASAAKI;IMAZEKI NOBUYA;YAMAKAWA HIROYUKI;MURAKAMI HIROHIKO |
分类号 |
H01L21/288;H01L21/768;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/288 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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