| 摘要 |
PURPOSE: An improved BiCMOS having a resistor with low temperature coefficient is provided to form a polysilicon thin film with a low temperature coefficient by implanting ions into a polysilicon layer as an insulation layer which is laminated in an integrated circuit, changing a resistance and damaging the polysilicon layer, and annealing it at a specific temperature so as to reduce a temperature coefficient to resistance. CONSTITUTION: When the temperature coefficient to resistance(TCRL) area is formed, a protection oxide to protect etching is laminated on an emitter polysilicon layer. Then, BF2 implanting substance is non-selectively implanted into the polysilicon layer. The substrate is covered with a protection oxide, a TCRL(141) is covered with a photo resist, and then it is etched by an appropriate size. The implantation to a resistor is activated during annealing at 900 deg.C, and the final doping shape of a bipolar device(200) and a MOS device is set. Thus, an amorphous silicon film can be laminated, and its resistivity can be adjusted by adding a dopant.
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