SEMICONDUCTOR DEVICE AND MANUFACTURE OF THE SAME

摘要

PURPOSE: To provide a semiconductor device having high reliability without lowering insulation of an insulating layer and without making contact faults. CONSTITUTION: This semiconductor device comprises a silicon substrate 1, a low-temperature aluminum film 4 and a high-temperature aluminum film 5 formed on the substrate 1 and containing a polycrystal. An opening 7 is formed by a crystal grain boundary on the surface of the film 5. Sidewalls 7a, 7b are formed so that a distance between the sidewalls 7a and 7b for forming the opening is shortened as one approaches toward the substrate 1.