INTEGRATED CIRCUIT AND METHOD THEREOF

摘要

PURPOSE: An integrated circuit is provided to easily conform to the standard/low temperature treating technology to improve the capacitance density and maintain a desired flatness by laying a dielectric material layer on lower electrodes and the surface of a dielectric layer and forming upper electrodes on the dielectric material layer. CONSTITUTION: Lower capacitor electrodes (102) are removed from the top surface of a dielectric (203) and also from a part of sidewalls. The etch back depth of the lower capacitor electrode (102) is on the order of 0.1 to 0.2 microns. A capacitor electrode layer (102) is removed, a dielectric material layer (405) for capacitors and upper electrodes (406) are deposited to complete forming of capacitors. Upper electrodes (406) of TiN or TaN on an oxide layer protect the oxide from Ti reducing the oxide layer and deteriorating dielectric characteristics. The tendency of short circuit between the lower capacitor electrode (102) and the upper electrode (406) due to planarizing steps of chemical mechanical polishing is avoided by physically separating the two layers (102, 406).