| 摘要 |
PURPOSE: Disclosed is a copper or copper-alloy sputtering target having crystals of random orientation and fine, uniform grain size. CONSTITUTION: After heating is applied to high-purity copper and copper-alloy material to at least about 500 deg.C for at least about 1 hr, strain of at least about 40% is applied by hot working. Further, additional strain of at least about 40% is applied by cold working to form a target stock. Then, the target stock is annealed at least about 300 deg.C for at least about 1 hr. By this procedure, fine, uniform grain size of desired random crystal orientation can be obtained in the final sputtering target. Moreover, in order to maintain the microstructure of the target material, the target material is explosion bonded to a metallic backing plate. By using this sputtering target, electric properties necessary for interconnection can be provided and a high uniformity thin film of minimal particle can be formed by sputtering.
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