| 摘要 |
PURPOSE: A high speed turn-off characteristic is attained by providing an electrode directly overlapping a third region plane for injecting charge carriers into a third region and first, second regions and making ohmic contact therewith. CONSTITUTION: A material part has a heavily doped silicon layer (30) (first region). A layer (31) (second region) is superposed on the layer (30), and (n) doped appropriately and then a lightly (n) doped silicon layer (32) (third region) is superposed thereon. A layer being superposed on the layer (32) is dielectric layer (36) of thermally grown silicon dioxide. A pattern is formed by photolithography in order to make an opening for exposing a part of the layer (32) through the layer (36). The layer (32) is implanted with p-type dopant atoms by ion implantation to form a p-type charge injection region superposed with p+ layer for making good ohmic contact with an electrode being formed later.
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