| 摘要 |
PURPOSE: To obtain a semiconductor device which is capable of driving a large current and restraining a short channel effect by a method wherein an element isolation insulating film formed so thick as to come into contact with a buried insulating layer is provided around a MOS transistor, and a buried electrode provided under the element isolation insulating film and a polycrystalline silicon gate electrode are made to overlap with each other in a two-dimensional manner. CONSTITUTION: The primary surface of a semiconductor substrate 101 as a p-type laminated SOI substrate which forms an element is insulated from its rear with a buried insulating layer 102. An N-type diffusion layer serving as a buried electrode 104 is provided under the buried insulating layer 102 which serves as the rear of the substrate 101. At this point, the buried insulating layer 102 functions as a gate insulating film for the buried electrode 104. A MOS transistor which is formed above the buried insulating layer 102 and specified by a field insulating film 103 is composed of an N-type source region 107, a drain region 108, and a gate electrode 105 provided through the intermediary of a gate insulating film 106. the buried electrode 104 is electrically connected to the gate electrode 105 using a polycrystalline silicon 109 buried in the field insulating film 103 as a wiring.
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