| 摘要 |
PURPOSE: To suppress generation of current between bands, without increasing the number of processes for manufacturing a transistor in a semiconductor device, where a CMOS logic transistor and a nonvolatile memory are mounted mixedly. CONSTITUTION: By a sidewall offset 54 formed by expanding a sidewall 53, source/drain diffused layers 65 and 66 of high-breakdown voltage transistors 10 and 20 are separated from the edge of a gate electrode 52 for forming, thus suppressing the generation of the leakage current between bands, and improving the breakdown voltage between a source and a drain.
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