发明名称 Thin film forming device for forming silicon thin film having crystallinity
摘要 An insulating member is interposed between a film formation chamber container and a plasma chamber container. Both containers are adjacent to and communicated with each other. In the film formation chamber container, a base material holder is provided for holding the base material. Raw material gas is introduced into the plasma chamber container and ionized by high frequency electric discharge, to generate plasma. A high frequency electrode and a high frequency electric power source are provided as a plasma generating unit. There is provided a porous electrode 30, the electric potential of which is the same as that of the plasma chamber container 24, between both chambers 22, 24 to partition both chambers. A pulse electric powder source for impressing bipolar pulse voltage, in which a positive polarity portion and a negative polarity portion are alternately repeated, is provided between the base material holder and both of the plasma chamber container and the porous electrode 30, the electric potential of which is the same as that of the plasma chamber container 24.
申请公布号 US6192828(B1) 申请公布日期 2001.02.27
申请号 US19990306990 申请日期 1999.05.07
申请人 NISSIN ELECTRIC CO., LTD. 发明人 TAKAHASHI EIJI;KIRIMURA HIROYA
分类号 C23C16/50;C23C16/452;C23C16/509;C23C16/511;C23C16/515;C23C16/517;H01J37/32;H01L21/205;H01L21/31;(IPC1-7):C23C16/00;H05H1/00 主分类号 C23C16/50
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