| 摘要 |
PROBLEM TO BE SOLVED: To obtain an electron beam exposure method, which enables registration correction with higher accuracy, when registration is applied to a substrate composed of two or more layers. SOLUTION: Enclosed regions 35 are defined by the existing conductive members 21 and 20 in a multilayer semiconductor device 100. Another conductive members 22 are formed in the respective enclosed regions 35 by an exposure method, using an electron beam which penetrates through respective layers 30, 31 and 32 so as not to cause interferences with either the existing conductive members 21 or 20. For is purpose, individual alignment marks (12) and (12') which are formed beforehand on the respectice layers 30, 31 and 32 for the patterns of the conductive members 20 and 21 are detected individually. In the respective layers 30, 31 and 32, differentioal values showing the deviations of the individual patterns (13) from the reference coordinate values are calculated, and correction values (ΔX andΔY) for correcting the differential values are obtained for the respective layers 30, 31 and 32. Then one of the correction values (δX andδY) is selectively used for the determination of the exposure position of the electron beam, when another conductive material layer 22 is formed in the enclosed region 35. |
