发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To prevent a plug loss of a tungsten plug without degrading a hole filling property, increasing plug resistance or causing trenching. SOLUTION: When a titanium film as an adhesive film for a tungsten plug is formed, an anisotropic sputtering method such as an ion metal plasma method or the like is employed and the film is made thick, 100 nm or greater. Consequently, when the adhesive film is removed, a tungsten film is projected. Thus, a plug loss of a tungsten plug can be prevented without degrading a hole filling property, increasing plug resistance or causing trenching.
申请公布号 JP2001053026(A) 申请公布日期 2001.02.23
申请号 JP19990230500 申请日期 1999.08.17
申请人 NEC CORP 发明人 KOBAYASHI KEN
分类号 H01L21/768;C23C14/04;H01L21/28;H01L21/285;H01L21/302;H01L21/461;H01L23/522;(IPC1-7):H01L21/28 主分类号 H01L21/768
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