| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of the capacitor of a semiconductor memory element, which eliminates a high-temperature heat-treating process for eliminating a natural oxide film to prevent deterioration of a lower transistor. SOLUTION: This manufacturing method of a capacitor of a semiconductor memory element comprises a stage to form a lower electrode 40, using a doped silicon material on a semiconductor substrate 30, a stage to form a silicon oxinitride film 42 on the surface of the electrode 40, a stage to form a TaON film on the film 42 by the reaction of Ta chemical vapor to O3 gas and NH3 gas and a stage to form an upper electrode 50 on the TaON film. The film 42 is formed in a temperature range of 200 to 600 deg.C.
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