| 摘要 |
PROBLEM TO BE SOLVED: To completely bury the fine wiring groove of an LSI substrate, a via hole, or the like for forming a fine pattern with uniform conductivity by eliminating Cu on the substrate other than a recessed part for flattening, and by forming a Cu thin film at the recessed part. SOLUTION: With Cu organic metal compound as the diffusion liquid of the Cu organic metal compound, the diffusion liquid easily and smoothly enters recessed parts such as wiring grooves with a large aspect ratio ranging from 1 to 30 on a semiconductor substrate, a via hole, and a contact hole, and completely file the recessed parts for forming a flat liquid film on the surface of the substrate. Then, in a specific atmosphere, heating is made at a specific temperature for a specific time, the diffusion medium of the diffusion liquid is evaporated, the organic metal compound such as Cu is closely buried at the recessed part, furthermore, the organic metal compound is decomposed for depositing Cu metal, and an organic substance is evaporated, thus forming the Cu or a Cu-C thin film on the semiconductor substrate.
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