| 摘要 |
PROBLEM TO BE SOLVED: To form a silicide film in a plug, to reduce the resistance of the plug and also to prevent the silicide layer in the plug from being connected with the capacitor lower electrode of a capacitor. SOLUTION: This manufacturing method of a semiconductor device is performed by a method, wherein a polysilicon film 13 is formed in a contact hole 12 formed in a first interlayer insulating film 11 on a silicon substrate 10, in such a way that the upper part of the film 13 is left in the hole 12. Thereafter a heat treatment is performed on a cobalt film deposited on the film 3 to form a cobalt silicide layer 15 on the surface part of the film 13, a barrier layer 17 is formed on the layer 15 to form a plug 18 consisting of the film 13 and the layers 15 and 17. Then a recessed part 20 is formed in a second interlayer insulating film 19 deposited on the film 11, in such a way that the upper surface of the plug 18 is exposed, a conductive film 21, which is formed as a capacitor lower electrode, is deposited on the wall surface and bottom of the recessed part 20. |
