| 摘要 |
PROBLEM TO BE SOLVED: To provide a bipolar transistor whose current amplification factor per volume is high by sandwiching a projection of the emitter or the collector by a plurality of projections of the other through a gap filled with a base. SOLUTION: In a collector C, a cross section parallel to the main face of a substrate has a comb-like plane shape provided with a plurality of bar-like projection parts (comb parts) which are mutually parallel and one bar-like base part connected to the base end parts of the comb parts in common. In an emitter E, the cross section parallel to the main face of the substrate is the comb parts having a plurality of projection parts equivalent to the comb parts and a base part connected to the base end parts of the comb parts in common in a way similar to the collector C. The adjacent comb parts of the emitter E are arranged in positions so that they sandwich the comb parts of the collector C. The emitters E and the collectors C are sandwiched by the two adjacent comb parts of the emitters E and the two comb parts.
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