| 摘要 |
PROBLEM TO BE SOLVED: To provide a capacitor of a semiconductor element provided with a dielectric film, wherein generation of a leakage current is little and which has a high dielectric constant. SOLUTION: A lower electrode 40 is formed on a semiconductor substrate 30. The surface of the electrode 40 is subjected to a surface treatment, so as to prevent generation of a natural oxide film. A (TaO)1-x(TiO)N film is deposited on the electrode 40 as a dielectric film. After that, a heat-treating process is executed for crystallizing the (TaO)1-x(TiO)N film. Then an upper electrode 45 is formed on the (TaO)1-x(TiO)N film. |
