| 摘要 |
<p>A ceramic substrate for use in semiconductor producing and inspecting devices, having a reduced rate of emission of α-rays and capable of preventing the malfunction of heaters, wafer probers, etc. and the reduction of chucking force, and reducing the number of particles adhering to semiconductor wafers, thereby ensuring that no wiring defects occur in semiconductor wafers. This ceramic substrate for use in semiconductor producing and inspecting devices is characterized in that the rate of emission of α-rays from the surface of the ceramic substrate is not more than 0.250 c/cm2 • hr.</p> |
