发明名称 METHOD OF PRODUCING COPPER FEATURES ON SEMICONDUCTOR WAFERS
摘要 <p>Copper or a copper containing compound is deposited in holes or depressions in a substrate, and the copper material is oxidized to fill voids and defects in the copper material, and then reduced to produce a uniform filling of the depression by elemental copper.</p>
申请公布号 WO2001013426(A1) 申请公布日期 2001.02.22
申请号 IB2000001115 申请日期 2000.08.11
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