| 摘要 |
<p>A method for controlling gate oxide thicknesses in either dual or triple gate oxide arrays uses ion implantation of both relatively low doses of oxygen into some portions and relatively low doses of nitrogen into other portions of the surface of a silicon wafer. Gate oxide layers are all thermally grown simultaneously. For dual gate oxide arrays the method produces thick and thin gate oxide layers, respectively, during a single thermal growth step, with resulting wider processing windows and better device reliability. An intermediate oxide thickness, useful for triple gate oxide arrays, can be thermally grown in the non-implanted portions of the major surface simultaneously with the growth of all other oxide layers.</p> |
