| 发明名称 |
Method of making a ferroelectric thin film, a ferroelectric capacitor, and a ferroelectric memory |
| 摘要 |
<p>A method of making a ferroelectric thin film includes the step of forming a ferroelectric thin film with a randomly oriented layered structure on a surface of a conductor layer. At least the surface of the conductor layer has a spherical crystal structure. <IMAGE> <IMAGE> <IMAGE></p> |
| 申请公布号 |
EP1077478(A2) |
申请公布日期 |
2001.02.21 |
| 申请号 |
EP20000117649 |
申请日期 |
2000.08.16 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
NASU, TORU;HAYASHI, SHINICHIRO |
| 分类号 |
H01L27/04;H01L21/314;H01L21/316;H01L21/8246;(IPC1-7):H01L21/316;H01L21/02 |
主分类号 |
H01L27/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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