发明名称 |
Semiconductor device |
摘要 |
To provide a semiconductor substrate and a light-valve semiconductor substrate capable of preventing the threshold value of a MOS transistor on a single-crystal silicon device forming layer from increasing and forming a MOS integrated circuit with a high reliability even for a long-time operation. A semiconductor substrate and a light-valve semiconductor substrate comprising a single-crystal silicon thin-film device forming layer 5001 formed above an insulating substrate 5004 through an adhesive layer 5003 and an insulating layer 5002 formed on the single-crystal silicon thin-film device forming layer, wherein a heat conductive layers 5201 and 5202 made of a material with a high heat conductivity are arranged between the single-crystal silicon thin-film device forming layer and the adhesive layer and on the insulating layer.
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申请公布号 |
US6191476(B1) |
申请公布日期 |
2001.02.20 |
申请号 |
US19970859571 |
申请日期 |
1997.05.20 |
申请人 |
SEIKO INSTRUMENTS INC. |
发明人 |
TAKAHASHI KUNIHIRO;SUZUKI MIZUAKI;YAMAZAKI TSUNEO;TAKASU HIROAKI;NAKAJIMA KUNIO;SAKURAI ATSUSHI;IWAKI TADAO;KOJIMA YOSHIKAZU;KAMIYA MASAAKI |
分类号 |
G02F1/136;G02F1/1335;G02F1/1362;G02F1/1368;H01L21/02;H01L21/336;H01L23/36;H01L23/367;H01L27/12;H01L29/78;H01L29/786;(IPC1-7):H01L23/10;H01L23/34 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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