| 摘要 |
Transistors (43, 44, 45) of an SOI type semiconductor integrated circuit or a liquid crystal display apparatus to which the SOI semiconductor integrated circuit is applied are prevented from leaking a current. A semiconductor region (41) is formed below at least some of a plurality of transistors through an insulating region 42, and changes in threshold value of the transistors (43, 44, 45) caused by a potential applied to the semiconductor region are adjusted. At this time, the transistors (43, 44, 45) have well potentials (45) fixed to a first potential in the circuit, and the semiconductor region is fixed to a second potential. A signal VSIG transferred from a source (43) to a drain (44) satisfies VDMIN<=VSIG<=VDMAX (VDMIN and VDMAX are the minimum and maximum values of the signal VSIG), and, depending on the conductivity types of the transistors (43, 44, 45), the signal VSIG is adjusted in such a manner that the following conditions are satisfied:VDMIN>VSS+Vth+DELTAVth (when an n-channel transistor is used)VDMAX<VDD+Vth+DELTAVth (when a p-channel transistor is used).
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