| 摘要 |
The fabrication method results in a stacked capacitor, in particular for use in a semiconductor memory device. The stacked capacitor has a semiconductor substrate of a first conductivity type and a well of a second conductivity type formed in the substrate. A stack of alternating first conductive layers of the first conductivity type and second conductive layers of the second conductivity type, with the interposition of respective insulation layers are formed on the semiconductor substrate. Two neighboring insulation layers are connected to one another on a first side of the stack by insulation bridges in such a way as to provide continuous insulation of the second conductive layers toward the first side. A first spacer, which is provided on the first side of the stack, forms a first capacitor connection and is preferably connected to the semiconductor substrate and to the first conductive layers. A second spacer, which is provided on the second side of the stack, forms a second capacitor connection connected to the well and to the second conductive layers.
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