发明名称 FILM-FORMING COMPOSITION, FORMATION OF FILM AND LOW- DENSITY FILM
摘要 PROBLEM TO BE SOLVED: To provide a film-forming composition capable of imparting a coating film excellent in dielectric constant characteristics and water absorbency characteristics and useful as an interlayer insulating film in semiconductor elements, etc. SOLUTION: This film-forming composition comprises (A) silane compounds composed of R2R3Si(OR1)2 and/or R2Si(OR1)3, and Si(OR1)4 (wherein R1 to R3 are each a monovalent organic group) or its hydrolyzate and/or condensation product, (B) at least one organic polymer selected from the group of a polyester, a polyester, a polycarbonate, a polyanhydride and a (meth)acrylic polymer and (C) at least one kind selected from the group consisting of an alcohol-based solvent, a ketone-based solvent, an amide-based solvent and an ester-based solvent.
申请公布号 JP2001049175(A) 申请公布日期 2001.02.20
申请号 JP19990177698 申请日期 1999.06.24
申请人 JSR CORP 发明人 KUROSAWA TAKAHIKO;SHIODA ATSUSHI;YAMADA KINJI
分类号 C08L33/02;C08L67/00;C08L69/00;C08L71/00;C08L73/02;C08L83/04;C09D133/02;C09D167/00;C09D169/00;C09D171/00;C09D183/04;(IPC1-7):C09D183/04 主分类号 C08L33/02
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