发明名称 |
Integrerad halvledardetektorteleskop med låg energitröskel |
摘要 |
<p>A device forming a high energy resolution integrated semiconductor DELTAE-E detector telescope is disclosed, in which is formed a very thin DELTAE detector portion (14) primarily fabricated from a first semiconductor wafer which is bonded/silicidized to a second semiconductor wafer forming an E detector portion (18). This DELTAE-E detector provides a well supported very thin DELTAE detector for high resolution. The very thin DELTAE detector portion bonded/silicidized to the E detector portion further provides between each other a buried metallic layer (16) acting as a contact common to the two detectors, which metal layer is thin and presents a low resistivity.</p> |
申请公布号 |
SE514380(C2) |
申请公布日期 |
2001.02.19 |
申请号 |
SE19960001235 |
申请日期 |
1996.03.29 |
申请人 |
STURE PETTERSSON;GOERAN THUNGSTROEM;HARRY WHITLOW |
发明人 |
STURE *PETTERSSON;GOERAN *THUNGSTROEM;HARRY *WHITLOW |
分类号 |
H01L25/04;H01L31/118;(IPC1-7):H01L31/118 |
主分类号 |
H01L25/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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