发明名称 SEMICONDUCTOR SUBSTRATE AND MANUFACTURE THEREOF
摘要 <p>PROBLEM TO BE SOLVED: To provide a semiconductor substrate, constituted into a structure wherein the step parts of the end parts of a laminated film constituting the boundary region between a characteristic measuring element (PCM), which is formed on the main surface of the substrate along with a semiconductor device and the device, are made gentle. SOLUTION: A boundary region 28, formed in such a way as to encircle a PCM 23b formed on a semiconductor substrate 1 is constituted of a laminated film, and the end part of at least the one layer of the layers constituting the laminated film is formed at a position different from those of the end parts of the other layers which constitute the laminated film in at least the one side of the sides of this region 28. By forming the substrate 1 into such a constitution, the steps on the end parts of the region 28 become gentle and when a bump electrode 11 is formed on electrode terminals on the PCM 23b by a plating method, a conductor film 10 is eliminated, which is used as the plated electrode on one side of plated electrodes, is made a step disconnection at the step parts. Hereby, the electrode 11 can also be stably formed on the electrode terminals on the PCM 23b.</p>
申请公布号 JP2001044250(A) 申请公布日期 2001.02.16
申请号 JP19990211674 申请日期 1999.07.27
申请人 MATSUSHITA ELECTRONICS INDUSTRY CORP 发明人 MITSUI AKIO
分类号 G01R31/28;H01L21/66;(IPC1-7):H01L21/66 主分类号 G01R31/28
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