发明名称 Etching solution, containing hydrofluoric acid
摘要 This invention relates to etching solutions which comprise hydrofluoric acid and organic solvents for use in the process for the production of integrated circuits. The etching solutions according to the invention are particularly suitable for the selective etching of doped silicate layers.
申请公布号 AU6822100(A) 申请公布日期 2001.02.19
申请号 AU20000068221 申请日期 2000.07.05
申请人 MERCK PATENT G.M.B.H 发明人 CLAUDIA ZIELINSKI;RUDOLF RHEIN;EBERHARD TEMPEL
分类号 C09K13/08;H01L21/308;H01L21/311 主分类号 C09K13/08
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