SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To prevent characteristics of a capacity element form deteriorating due to reduction of a ferroelectric film or a high dielectric film which constitutes a capacity insulating film. SOLUTION: A first protection insulating film 106 is deposited on first and second field-effect transistors formed on a semiconductor substrate 100, and a capacity lower electrode 109, a capacity insulating film 110A comprising of an insulated metal oxide film and a capacity element mode of a capacity upper electrode 111 are formed on the first protection insulating film 106. The capacity lower electrode 109 is connected directly to an impurity diffused layer 105 of a first field-effect type transistor by a first contact plug 107 formed on the first protection insulating film 106, and the capacity upper electrode 111 is connected directly to the impurity layer 105 of a second field-effect type transistor by a second contact plug 108 formed on the first protection insulating film 106.