| 摘要 |
PROBLEM TO BE SOLVED: To provide a ridge-type semiconductor laser element, where horizontal transverse mode control of oscillating laser beam is improved and current threshold is reduced. SOLUTION: In this ridge-type semiconductor laser element including a current block layer 18, a first prescribed region 16 in contact with both ends in the transverse direction of a selected region of an active layer 13 contains an n-type dopant, and a second prescribed region 7 in contact with the first region 16 contains a p-type dopant, and an n/p structure consisting of the first and second regions is employed. Thereby current is constricted in a region positioned directly under the selected region of the active layer 13.
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