发明名称 EPITAXIAL LAYER STRUCTURE AND MANUFACTURE THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a layer structure in which an epitaxial material, substantially free of cracks is grown on a substrate having a non-matching lattice constant and a relatively simple manufacturing method for realizing the structure. SOLUTION: A manufacturing method for reducing cracks 17 in an epitaxially grown layer 55 includes a step of growing a first epitaxial layer 52, composed of a first material so as to have a principal surface 63, a step of forming faces 56a and 56b which are nearly perpendicular to the principal surface 63 in the epitaxial layer 52, and a step of forming a mask 54 on the principal surface 63 of the layer 52, in a state where the faces 56a and 56b are not masked. The manufacturing method also includes a step of growing a second epitaxial layer 55 composed of a material, which is different from that of the first epitaxial layer 52 in the horizontal direction.
申请公布号 JP2001044121(A) 申请公布日期 2001.02.16
申请号 JP20000153931 申请日期 2000.05.25
申请人 AGILENT TECHNOL INC 发明人 CHEN YONG;WANG SHIH-YUAN
分类号 C30B29/38;C30B25/04;C30B29/40;H01L21/20;H01L21/205;H01S5/323;H01S5/343;(IPC1-7):H01L21/20 主分类号 C30B29/38
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