| 摘要 |
PROBLEM TO BE SOLVED: To form a gate structure suitable for a pressure contact semiconductor device with less proportion of termination region to a chip area by constituting at least a second electrode of a barrier metal layer. SOLUTION: A p-n-p type transistor is constituted of a p-type emitter layer 11, a n-type semiconductor substrate 1, and a p-type collector layer 21, and an insulating gate transistor which controls the p-n-p type transistor is constituted of a gate electrode 13, a n-type layer 12, the p-type emitter layer 11, and the n-type semiconductor substrate 1. A barrier metal layer 43 is in ohmic contact with a guard ring 41 via contact hole 201, and the barrier metal layer 43 expands a depletion layer formed on the n-type semiconductor substrate with a field oxide film 42 in-between, and thereby relaxes the electric field concentration. Therefore, a semiconductor device of gate structure, which is less in proportion of the termination region to a chip area and is suitable for cold-welded semiconductor devices, can be obtained. |
