| 摘要 |
PURPOSE: A semiconductor memory device is provided to minimize a gain variation of a main sense amplifier by compensating a resistance variation of the main sense amplifier generated in a manufacturing process. CONSTITUTION: A semiconductor memory device includes a block sense amplifier(10), a dummy block sense amplifier(20), a dummy main sense amplifier(30), a reference voltage generator(40), a level comparator(50) and a main sense amplifier(60). The block sense amplifier amplifies data read from a memory cell array and outputs a sense data pair. The dummy block sense amplifier generates an identical dummy sense data pair. The dummy main sense amplifier receives the dummy sense data pair and outputs a dummy output data pair. The reference voltage generator the first reference voltage and the second reference voltage lower than the first reference voltage. The level comparator generates a plurality of control signals by comparing the dummy output data pair with the first and second reference voltages. The main sense amplifier compensates a resistance variation generated in a manufacturing process and outputs an output data pair by amplifying the sense data pair.
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