METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to prevent parasitic capacitance from high dielectric constant and stress of a wafer and to improve the reliability of device's operation and the yield rate of the process by use of an SiC layer. CONSTITUTION: An oxide layer(11) is formed on a semiconductor(10) and a gate oxide layer(12) is formed on the oxide layer(11). A gate electrode(13), overlapped on the pattern of a mask SiC layer(21), is formed on the gate oxide layer(13). A spacer(22) which consists of an SiC is formed on the gate electrode(13) and the sidewell of the Sic layer. An interlayer dielectric(18) is formed an entire surface of the structure and planized the upper portion.