| 摘要 |
PURPOSE: A sense-amplifying circuit within a semiconductor memory is provided to prevent an influence from resistances and capacitances so that an operation speed of the sense-amplifying circuit is improved. CONSTITUTION: The device includes the first selection part(1), the second selection part(2), a sense-amplifying controller(3), a sense-amplifying driver(4), the first switching part(5), the second switching part(6) and a sense amplifier(7). The first selection part(1) generates the first switching control signal(SHL) according to mat selection signals(MSi,MSj). The second selection part(2) generates the second switching control signal(SHR) according to the mat selection signals(MSi,MSj). The sense-amplifying controller(3) outputs enable signals(SAN,SAP1, SAP2) according to the mat selection signal(MSi). The sense-amplifying driver(4) controls an output operation for a source voltage and a ground voltage according to the enable signals(SAN,SAP1, SAP2). The first switching part(5) applies data of the first mat(MATi) to a bit line(BL) and an inversion bit line(BLB) according to the first switching control signal(SHL). The second switching part(6) applies data of the second mat(MATj) to the bit line(BL) and inversion bit line(BLB) according to the first switching control signal(SHL). The sense amplifier(7) senses the applied data.
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