发明名称 SEMICONDUCTOR MEMORY WHICH CAN PREVENT MALFUNCTION CAUSED BY LOAD OF COLUMN ADDRESS LINE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor memory which can be normally operated even when a load of a column address line transmitting a column address is large and they are independent each other though it does not affect operation speed. SOLUTION: This semiconductor memory is provided with a column selection line driver 53 receiving a decoded address and driving a column selection line of a memory cell array 54 responding to a column selection line control signal, a column selection line control signal generator 55 receiving a part of a buffered column address and generating a column selection line control signal responding to either of first and second control signals and an internal clock signal, and a control signal generator 56 generating first and second control signals responding to an externally applied column address strobe signal, a write-in enable-signal, and an internal clock signal.
申请公布号 JP2001043679(A) 申请公布日期 2001.02.16
申请号 JP20000211782 申请日期 2000.07.12
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 TEI SHINKYON;KIN CHIKYOKU
分类号 G11C11/407;G11C7/10;G11C7/22;G11C11/406;(IPC1-7):G11C11/407 主分类号 G11C11/407
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