发明名称 |
SEMICONDUCTOR MEMORY WHICH CAN PREVENT MALFUNCTION CAUSED BY LOAD OF COLUMN ADDRESS LINE |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory which can be normally operated even when a load of a column address line transmitting a column address is large and they are independent each other though it does not affect operation speed. SOLUTION: This semiconductor memory is provided with a column selection line driver 53 receiving a decoded address and driving a column selection line of a memory cell array 54 responding to a column selection line control signal, a column selection line control signal generator 55 receiving a part of a buffered column address and generating a column selection line control signal responding to either of first and second control signals and an internal clock signal, and a control signal generator 56 generating first and second control signals responding to an externally applied column address strobe signal, a write-in enable-signal, and an internal clock signal.
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申请公布号 |
JP2001043679(A) |
申请公布日期 |
2001.02.16 |
申请号 |
JP20000211782 |
申请日期 |
2000.07.12 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
TEI SHINKYON;KIN CHIKYOKU |
分类号 |
G11C11/407;G11C7/10;G11C7/22;G11C11/406;(IPC1-7):G11C11/407 |
主分类号 |
G11C11/407 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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