| 摘要 |
A semiconductor strain gage having an electrically resistive substrate layer and a layer of electrically conductive silicon supported by the substrate layer. The silicon layer can be an epitaxial silicon layer grown on a surface of the substrate layer or a diffused or ion-implanted layer formed in the surface of the substrate layer. Also, a force measuring and detecting device including a force responsive member and the above-described semiconductor strain gage attached to the force responsive member, the strain gage measuring forces applied to the force responsive member. |
