| 摘要 |
PROBLEM TO BE SOLVED: To obtain a composition for forming an insulating film and a material for forming the insulating film excellent in uniformity of a coating film, a low permittivity, a mechanical strength, long-term preservation stability, etc., of a solution as a layer insulating film material in a semiconductor element, etc. SOLUTION: This composition for forming a film comprises (A) a compound prepared by hydrolyzing and condensing at least one kind of compound selected from the group consisting of a compound represented by formula I: R1aSi(OR2)4-a [R1 denotes hydrogen atom, fluorine atom or a monovalent organic group; R2 denotes a monovalent organic group; (a) denotes an integer of 0-2] and a compound represented by formula II: R3b(R4O)3-bSi-(R7)d-Si(OR5)3-cR6c (R3, R4, R5 and R6 may be each the same or different and denote each a monovalent organic group; b and c may be each the same or different and denote each a number of 0-2; R7 denotes oxygen atom or (CH2)n; d denotes 0 or 1; n denotes a number of 1-6) in the presence of a metal chelating compound and (B) a compound obtained by hydrolyzing and condensing at least one kind of compound selected from the compound represented by formula I and the compound represented by formula II in the presence of an acidic catalyst.
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