| 摘要 |
<p>PROBLEM TO BE SOLVED: To restrain reduction in a yield in manufacturing the large area, and to reduce wiring resistance by electrically connecting the electron gun of an electron emitting part and wiring of a support base board via a conductive plug. SOLUTION: A sub-matrix 2 is formed on a silicon substrate by integrating field emission type emitters composed of a metal. Cathode wiring 4 and gate wiring 5 are wired into a multilayer matrix form so as to cross at a right angle to each other, plural electron emitting regions 3 are formed at the intersection, and plural sub-matrixes 2 are mounted at regular intervals on a backplate 1. The sub-matrixes 2 are stuck to the backplate 1 in a part of a dotted line 8, first cathode wiring 4 formed on the sub-matrixes 2 and second cathode wiring formed on the backplate 1 are electrically connected by a conductive plug 6, and a first gate electrode and gate wiring 5 and second gate wiring are electrically connected by a conductive plug 7.</p> |
