| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device which can be surely remedied by reducing the changes of defects of a spare memory cell. SOLUTION: This semiconductor memory device includes normal word lines 1#1-1#4, spare word lines 2#1-2#2, and bit lines 3#1-3#4. The intervals between the spare word lines are larger than that between the normal word lines. The distance between the group of normal word lines and the group of spare word lines is also set larger. Due to this structure, chances of defective contacts due to contamination can be reduced in a manufacturing stage. Moreover, storage nodes 64j1-6#4 of the spare memory cells are made larger than storage nodes 4#1-4#8 of the normal memory cells, so as to increase the capacity of the spare memory cells. |
