| 摘要 |
PROBLEM TO BE SOLVED: To obtain a silicon die of structure having reliability which prevents breakdown due to a peak current along the P/N junction end portion and the surface insulating film of a silicon power device. SOLUTION: The upper part of a silicon substrate 1101 is made an upper layer 1102 doped into an N-type. On the upper part of the layer 1102, a P-well 1103 is formed by P-type dope injection, and an SiC layer 1105 is formed by carbon fold out. The SiC layer has a critical electric field which is higher than that of the N-type upper layer 1102, and is made into an edge band, on which an oxide layer 1106 is formed. A metal layer 1107 is formed on the P-well 1103. The SiC layer 1105 stretches as far as to a part under the P well 1103 and prevents a P-well 1103 end potion from being bonded directly to the upper layer part 1102. Concentration of a leakage current 1110 in the P-well end portion is relaxed, and the current moves to a P/N junction parallel surface part 1109. Thereby surface insulating film breakdown is improved effectively.
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