| 摘要 |
PROBLEM TO BE SOLVED: To prevent the diffusion of magnesium which is contained in a p-type semiconductor layer as a p-type dopant in a light emitting layer, by forming an n-type diffusion preventing layer between the p-type semiconductor layer, to which the p-type dopant that is easily diffused in a semiconductor layer is added and an active layer. SOLUTION: In a gallium nitride light emitting element, a gallium nitride buffer layer 102 grown at a low temperature, an n-type gallium nitride contact layer 103, an n-type InGaN crack preventing layer 104, an AlGaN layer 105, an n-type gallium nitride optical guide layer 106, an active layer 107 having a seven-cycle multiple quantum well structure, an n-type gallium nitride diffusion preventing layer 114, a p-type gallium nitride optical guide layer 109, a p-type AlGaN clad layer 110, and a p-type gallium nitride contact layer 111 are formed on a sapphire substrate 101. In addition, an n-type gallium nitride layer 114 is formed between the undoped AlGaN indium dissociation preventing layer 108 and the Mg-added p-type gallium nitride optical guide layer 109. Accordingly, the diffusion of Mg in the quantum well layer can be prevented. |
