| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device whose data transfer speed is increased without reducing yield and reliability and not preventing miniaturization, and a manufacturing method therefore. SOLUTION: A manufacturing method of a semiconductor device in which counterposed semiconductor chips 1, 2 are bonded to each other with a resin composition layer 4 whose main component is a thermosetting resin composition and in which the wirings of the semiconductor chips are electrically connected to each other by bumps. The method includes the steps of: counterposing a first and a second semiconductor chips 1, 2 with the resin composition layer 4 and the bump 3 disposed therebetween; melting the resin composition layer 4 at a temperature below the melting point of the bump 3; melting the bump 3 at a temperature over the melting point of the bump 3 with the gap between the first and second semiconductor chips 1, 2 kept constant; electrically connecting the first and second semiconductor chips 1, 2 each other; and then hardening the resin composition layer 4 at a temperature below the melting point of the bump 3.
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