| 摘要 |
PROBLEM TO BE SOLVED: To obtain a vertical semiconductor device having improved high frequency characteristics by reducing the base area, relative to the collector. SOLUTION: Before a step of forming base electrodes 21a, 21e, emitter electrodes 21b, 21f and collector electrodes 21c, 21g, a step of forming base extraction structures 16, 16a, emitter extraction structures 17, 17a and collector extraction structures 18 is executed as a separate step. This makes it possible to reduce the area of the base 9, relative to the collector 3 by 50%, compared with that in prior art. Thus the junction capacitance between the base and the collector can be reduced to improve the high frequency characteristics.
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