发明名称 PROCESS SIMULATION METHOD
摘要 PROBLEM TO BE SOLVED: To omit wasteful deformation calculation and realize rapid oxidation calculation by extracting an effective oxide film thickness from a surface oxidant concentration, by cutting time incrementΔt and returning to a second process without carrying out deformation calculation when an effective oxide film is thicker than a designated oxide film. SOLUTION: An effective oxide film thickness in a designated place is calculated from a surface oxidant concentration Cox (S106). An effective oxide film thickness Tox-eff is the sum of an oxide film thickness in a time t-save which can be calculated from an oxidant concentration and the amount of an increase of an oxide film thickness byΔt. When the effective oxide film thickness Tox- eff is compared with a designated film thickness Tox-target (S107) and both thereof are matched with each other, oxidation reaction velocity calculation (S113), new interface preparation (S114) and deformation calculation (S115) are carried out and finished. When the effective oxide film thickness Tox-eff is thicker than a designated film thickness Tox-target, time increment is cut to 1/2 (S109). In this case, it returns to a preceding process (S104) without carrying out deformation calculation and above procedures are repeated.
申请公布号 JP2001035847(A) 申请公布日期 2001.02.09
申请号 JP19990206525 申请日期 1999.07.21
申请人 NEC CORP 发明人 AKIYAMA YUTAKA
分类号 H01L21/316;G06F17/50;H01L21/00;(IPC1-7):H01L21/316 主分类号 H01L21/316
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