| 摘要 |
PROBLEM TO BE SOLVED: To form a gate electrode with less variations of a pattern width by forming the gate electrode of a plurality of nearby transistors as one gate electrode when forming the gate electrode and then eliminating the end and central part for dividing into a plurality of electrodes. SOLUTION: A polysilicon film is partially eliminated and a gate electrode 201 is formed. More specifically, the gate electrode of two adjacent transistors is formed as one gate electrode 201. Then, after going through a lithography process for partially masking the gate electrode and then applying ultraviolet rays to the mask part, shifting is made to an etching process for opening the masked part, namely an opening 301. By partially eliminating the end and central part of the gate electrode 201, two gate electrodes 401 and 402 are formed. After this, a MOS transistor is formed by the normal formation process of transistors, thus reducing scattering when forming a plurality of gate electrodes for making uniform the characteristics.
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