发明名称 |
TUNGSTEN HARD MASK FOR DRY ETCHING ALUMINUM-CONTAINING LAYERS |
摘要 |
A method for patterning an aluminum-containing layer. A tungsten-containing layer is provided over an aluminum-containing layer. The tungsten-containing layer is patterned to form an opening therein, so that the opening exposes an underlying portion of the aluminum-containing layer. The patterned tungsten-containing layer is exposed to an etch having a substantially higher etch rate of the aluminum-containing layer than of the tungsten-containing layer to remove the exposed portion of the aluminum-containing layer. |
申请公布号 |
WO0109937(A1) |
申请公布日期 |
2001.02.08 |
申请号 |
WO2000US16262 |
申请日期 |
2000.06.14 |
申请人 |
INFINEON TECHNOLOGIES NORTH AMERICA CORP.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GUTSCHE, MARTIN;ATHAVALE, SATISH, D. |
分类号 |
H01L21/3213 |
主分类号 |
H01L21/3213 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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