| 摘要 |
A method or apparatus for removing photoresist from a semiconductor wafer 11 uses ozone-dissolved water. A first step uses a heater 16 (21 Figure 3) to elevate the temperature of the semiconductor wafer. A second step uses a generator 14 for producing ozone-dissolved water which is released via discharge means 13 onto the semiconductor wafer, when the temperature of the wafer reaches a predetermined temperature. Preferably, the predetermined temperature is not less than 100 degrees Celsius. The wafer may be heated by either a heater (21, Figure 3) incorporated inside of a stage 12 or by an infrared lamp 16. The method may involve rotating, rinsing and drying the wafer.
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