| 摘要 |
PROBLEM TO BE SOLVED: To improve uniformity and flatness of a polishing surface and to miniaturize a polishing device. SOLUTION: A chemimechanical polishing(CMP) device comprises a wafer carrier 1; six roll shape polishing pads 2; a dresser 3; a slurry container 4; and an optical end point device(EPD) 5. The surface of a semiconductor wafer 6 is polished such that the polishing pad 2 is rotated as approximate 1/4 to 1/3 of the diameter of the sectional circle thereof is immersed in slurry 7 and the surface of the semiconductor wafer 6 is brought into contact with the side of the roll of the polishing pad 2. In this case, the wafer carrier 1 is horizontally moved as it is rotated around a central axis 1a. Polishing dust adhered to the polishing pad 2 is removed by the dresser 3. A polishing end point is detected by the EPD 5 and at a stage when the polishing end point is detected, rotation of the polishing pad 2 is stopped and polishing of the surface of the semiconductor wafer 6 is completed. |
